Controlled Synthesis of Topological Insulator Nanoplate Arrays on Mica
Controlled Synthesis of Topological Insulator Nanoplate Arrays on Mica
复制标题
云母上拓扑绝缘体纳米板阵列的受控合成
DOI：
10.1021/ja3021395
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发表时间：
2012-04-11
影响因子：
15
通讯作者：
Liu, Zhongfan
中科院分区：
文献类型：
--
作者：
Li, Hui;Cao, Jie;Liu, Zhongfan
使用范德华外延技术在云母基板上实现了单晶拓扑绝缘体（Bi2Se3 和 Bi2Te3）纳米板阵列的定向和位置控制合成。生产出横向尺寸接近 0.1 毫米或均匀厚度低至 1-2 纳米的单个超薄纳米板。通过角分辨光电子能谱测量证实了纳米板聚集体的单狄拉克锥表面状态。在云母上生长的大晶粒单晶纳米板阵列可以作为光谱学和原位传输测量相结合的简便平台，这可能为研究奇异物理现象、表面化学反应和拓扑绝缘体的修饰开辟新途径。
The orientation- and position-controlled synthesis of single-crystal topological insulator (Bi2Se3 and Bi2Te3) nanoplate arrays on mica substrates was achieved using van der Waals epitaxy. Individual ultrathin nano-plates with the lateral dimension up to similar to 0.1 mm or uniform thickness down to 1-2 nm were produced. Single-Dirac-cone surface states of nanoplate aggregates were confirmed by angle-resolved photoemission spectroscopy measurements. The large-grain-size, single-crystal nanoplate arrays grown on mica can act as facile platforms for a combination of spectroscopy and in situ transport measurements, which may open up new avenues for studying exotic physical phenomena, surface chemical reactions, and modification in topological insulators.