Mapping of Trap Densities and Hotspots in Pentacene Thin‐Film Transistors by Frequency‐Resolved Scanning Photoresponse Microscopy
Mapping of Trap Densities and Hotspots in Pentacene Thin‐Film Transistors by Frequency‐Resolved Scanning Photoresponse Microscopy
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DOI：
10.1002/adma.201300958
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发表时间：
2013-10
影响因子：
29.4
通讯作者：
C. Westermeier;M. Fiebig;B. Nickel
中科院分区：
文献类型：
--
作者：
C. Westermeier;M. Fiebig;B. Nickel
报道了并五苯薄膜晶体管的频率分辨扫描光响应显微术。光响应图案映射陷阱状态的平面内分布，该平面内分布由晶体管的栅极电压调节的陷阱填充水平叠加。因此，光响应图中的局部热点指示并五苯薄膜内的高陷阱密度的区域。
Frequency-resolved scanning photoresponse microscopy of pentacene thin-film transistors is reported. The photoresponse pattern maps the in-plane distribution of trap states which is superimposed by the level of trap filling adjusted by the gate voltage of the transistor. Local hotspots in the photoresponse map thus indicate areas of high trap densities within the pentacene thin film.