Silicon carbide nanowires grown on graphene sheets
Silicon carbide nanowires grown on graphene sheets
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DOI：
10.1016/j.ceramint.2014.12.117
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发表时间：
2015-05-01
影响因子：
5.2
通讯作者：
Jiang, Nan
中科院分区：
文献类型：
--
作者：
Wang, Dong;Xue, Chen;Jiang, Nan
采用添加Fe催化剂的工业石墨烯和硅粉的混合物，通过简单的热处理在石墨烯上合成了碳化硅纳米线(SCN)。采用一系列分析技术对生长的SCN进行了研究。证实了单晶是立方的β-碳化硅，并沿垂直于(111)的择优方向生长。大多数平均长度约为10微米、直径为60 nm的SCN主要分布在石墨烯薄膜上。几个几微米长的SCN显示出扭曲的形态。提出了固-液-固(SLS)和气-液-固(VLS)机理，解释了SCN在石墨烯薄膜上的生长过程，并与SCN的成核、生长进行了很好的匹配。(C)2015年爱思唯尔有限公司和Techna Group S.r.l.版权所有。
Silicon carbide nanowires (SCNs) were synthesized on graphene sheets by a simple heat treatment using a mixture of Si powders and commercial graphene sheets with Fe catalyst addition. A series of analytical techniques were employed to investigate the as-grown SCNs. The SCNs were confirmed to be the cubic beta-sic and grew along their preferred direction perpendicular to (111). Most of the SCNs with the average length of about 10 mu m and diameter of 60 nm lay on the graphene sheets. A few SCNs of several micrometers in length show twisted morphology. Solid liquid solid (SLS) and vapor liquid solid (VLS) mechanisms were proposed which interpret the SCNs' growth process on the graphene sheets and match the nucleation, growth of SCNs very well. (C) 2015 Elsevier Ltd and Techna Group S.r.l. All rights reserved.