Formation of ultrathin segregated-Ge crystal on Al/Ge(111) surface
Formation of ultrathin segregated-Ge crystal on Al/Ge(111) surface
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DOI：
10.35848/1347-4065/ab69de
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发表时间：
2019-06
影响因子：
1.5
通讯作者：
Masato Kobayashi;A. Ohta;M. Kurosawa;M. Araidai;N. Taoka;Tomohiro Simizu;M. Ikeda;K. Makihara;S. Miyazaki
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文献类型：
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作者：
Masato Kobayashi;A. Ohta;M. Kurosawa;M. Araidai;N. Taoka;Tomohiro Simizu;M. Ikeda;K. Makihara;S. Miyazaki
我们研究了通过Al/Ge(111)结构的真空退火形成超薄Ge晶体层。通过控制热蒸发过程中的Al厚度和沉积速率，发现异质外延Al层在Ge(111)衬底上生长，其中Al表面成为偏析Ge层晶体结构的模板。然后，通过真空退火评估了Al/Ge(111)结构的表面平坦化和Ge偏析，并证明了在异质外延Al表面上形成了厚度低于1 nm的超薄偏析Ge晶体。
We have investigated the formation of an ultrathin Ge crystal layer by vacuum annealing of the Al/Ge(111) structure. An hetero-epitaxial Al layer was found to be grown on a Ge(111) substrate by control of Al thickness and deposition rate during thermal evaporation, which the Al surface becomes the template of crystallographic structure of a segregated Ge layer. Then, surface flattening and Ge segregation of the Al/Ge(111) structure by vacuum annealing were evaluated, and the formation of ultrathin segregated-Ge crystals with a thickness below 1 nm on the hetero-epitaxial Al surface have been demonstrated.