On the thickness scaling of ferroelectricity in Al0.78Sc0.22N films
On the thickness scaling of ferroelectricity in Al0.78Sc0.22N films
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DOI：
10.35848/1347-4065/abef15
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发表时间：
2021-05-01
影响因子：
1.5
通讯作者：
Kakushima, Kuniyuki
中科院分区：
文献类型：
--
作者：
Tsai, Sung-Lin;Hoshii, Takuya;Kakushima, Kuniyuki
研究了溅射沉积无极化Al0.78Sc0.22N薄膜的厚度刻度对其铁电性能的影响。X-射线摇摆曲线测量证实了薄膜的c轴取向，薄膜的厚度为10 nm。从电容测量中观察到铁电型磁滞和无极化行为，即使厚度为20 nm也是如此。当薄膜厚度小于35 nm时，剩余偏振度(P-r)逐渐降低。开关(SW)循环测试显示薄膜有唤醒效应，特别是对于35 nm以上的厚膜。用较薄的Al0.78Sc0.22N薄膜在20 nm左右，以P-r为代价，可以获得超过10(5)次的较长的Sw周期。
Thickness scaling on ferroelectric properties of sputter-deposited poling-free Al0.78Sc0.22N films has been examined. The c-axis oriented films were confirmed by X-ray rocking curve measurements with a film as thin as 10 nm. Ferroelectric-type hysteresis and poling-free behaviors are observed from the capacitance measurements, even with a thickness of 20 nm. The remnant polarization (P-r) shows a gradual degradation when the thickness is less than 35 nm. The switching (SW) cycle test reveals a wake-up effect for the film, especially for thick films of over 35 nm. A longer SW cycle of over 10(5) times can be obtained with thinner Al0.78Sc0.22N films around 20 nm at the cost of P-r.