TOTAL INTERNAL REFLECTION AND ITS APPLICATION TO SURFACE STUDIES
TOTAL INTERNAL REFLECTION AND ITS APPLICATION TO SURFACE STUDIES
复制标题
全内反射及其在表面研究中的应用
DOI：
10.1111/j.1749-6632.1963.tb54948.x
复制
发表时间：
1963
期刊：
影响因子：
--
通讯作者：
N. Harrick
中科院分区：
文献类型：
--
作者：
N. Harrick
Measurements of the distributions of carrier disturbances through the use of absorption of infrared radiation in semiconductors have been used successfully to study bulk properties of semiconductors.' Since the density and distribution of the added carriers are also affected by the nature of the surface, some specific properties of the surface can be deduced from these measurements, as was discussed at the Second Conference on Semiconductor Surfaces.2 It was further indicated that through the use of multiple total internal reflection, the space charge region can be probed and the properties of the carriers in the space charge region can thus be measured. Since that time it has been shown that because of the special characteristics peculiar to total internal reflection, the outside as well as the inside of the surface can be studied. In particular, minute quantities of foreign material on the surface can be d e t e ~ t e d . ~ The thickness and optical constants of oxides and thin films on the surface can be measured. Some effects involving high electric fields can be studied more easily a t the surface than in the bulk. Recently it was shown that the absorption spectrum of the surface states, whose density may be only lop4 of one monolayer, can be determinedP This type of experiment thus gives us the possibility of identifying chemisorbed molecules, determining the nature of their bonding to the surface and studying the surface states on one and the same sample. Before discussing how these measurements are made, the characteristics associated with total internal reflection will be reviewed briefly so that it will become evident how we can take advantage of them in each specific application.
