SILICON SCHOTTKY BARRIER DIODE WITH NEAR-IDEAL I-V CHARACTERISTICS
SILICON SCHOTTKY BARRIER DIODE WITH NEAR-IDEAL I-V CHARACTERISTICS
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DOI：
10.1002/j.1538-7305.1968.tb00038.x
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发表时间：
1968-01-01
影响因子：
--
通讯作者：
SZE, SM
中科院分区：
文献类型：
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作者：
LEPSELTE.MP;SZE, SM
利用PtSi触点和扩散保护环制备了具有近理想正向和反向I - V特性的金属半导体二极管。通常，对于在n型（111）取向、0.35欧姆- cm硅外延衬底上制造的面积为2.5 × 10−6cm2的器件，正向电流如下表达式If= I8exp (qV/nkT)，电流为I8= 10−12A, n = 1.02。反向击穿发生在相同n型掺杂的p+n硅结的理论击穿电压下。在几乎所有以前的肖特基势垒二极管中观察到的过早击穿已被证明是由电极锐边效应引起的。除了提供尖锐的击穿电压外，保护环还消除了异常高的泄漏电流，但仍然保留了其他肖特基屏障常见的快速恢复时间特性。通常，在10ma下测量的恢复时间小于0.1 ns，这是测量的分辨率。
Metal‐semiconductor diodes with near‐ideal ‐forward and reverse I‐V characteristics have been fabricated using PtSi contacts and diffused guard rings. Typically, for a device with an area of 2.5 × 10−6cm2made on an n‐type (111) oriented, 0.35 ohm‐cm silicon epitaxial substrate, the forward current follows the expression If= I8exp (qV/nkT) over eight orders of magnitude in current with I8= 10−12A and n = 1.02. The reverse breakdown is sharp and occurs at the theoretical breakdown voltage of p+n silicon junctions of the same n‐type doping. The premature breakdown observed in nearly all previous Schottky barrier diodes has been shown to be caused by electrode sharp‐edge effects. Besides giving sharp breakdown voltage, the guard ring also eliminates anomalously high leakage currents, yet still retains the fast recovery time characteristic common to other Schottky barriers. Typically, the recovery time measured at 10 ma is less than 0.1 ns, the resolution of the measurement.