Practical in‐line reactive sputtering
Practical in‐line reactive sputtering
复制标题
实用在线反应溅射
DOI：
10.1116/1.574428
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发表时间：
1987
期刊：
影响因子：
--
通讯作者：
William G. Carruthers
中科院分区：
文献类型：
--
作者：
R. G. Johanson;William G. Carruthers
本文综述了在氧-氩气和氮-氩气气氛下用直流磁控溅射法制备金属靶材的氧化和氮化膜的研究进展。研究的金属有钨、钛、钽、镍和铝。讨论了沉积速率、溅射压力、气体分压和靶功率等工艺参数与薄膜光学和电学性能的关系。系统修改，如气体歧管，和工艺启动程序的详细。
This paper presents an overview study of oxide and nitride films produced by reactive dc magnetron sputtering of metallic targets in oxygen–argon and nitrogen–argon atmospheres, using production in‐line equipment. The metals investigated are tungsten, titanium, tantalum, nickel, and aluminum. Process parameters, such as deposition rate, sputtering pressure, gas partial pressures, and target power, are discussed relative to optical and electrical film properties. System modifications, such as gas manifolding, and process initiation procedures are detailed.