Studies of silicon photomultipliers at cryogenic temperatures
Studies of silicon photomultipliers at cryogenic temperatures
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DOI：
10.1016/j.nima.2010.07.008
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发表时间：
2011-02-01
影响因子：
1.4
通讯作者：
Del Guerra, A.
中科院分区：
文献类型：
--
作者：
Collazuol, G.;Bisogni, M. G.;Del Guerra, A.
研究了硅光电倍增管（SiPMs）的低温特性：在50 K < T < 320 K范围内，研究了I-V特性、击穿电压、暗噪声、后脉冲、串扰、脉冲形状、增益和光子探测效率随温度的变化。我们根据硅的温度依赖性特性以及与高电场中载流子产生、传输和倍增相关的模型讨论了我们的测量结果。我们得出结论，SiPM在低温环境中提供了真空管光电倍增管（PMT）的一个很好的替代品，甚至比在室温下更好：特别是它们在100 K < T <200 K的区间表现出色。(C)2010 Elsevier B. V.保留所有权利。
We investigate the behavior of silicon photomultipliers (SiPMs) at low temperatures: I-V characteristics, breakdown voltage, dark noise, afterpulsing, crosstalk, pulse shape, gain and photon detection efficiency are studied as a function of temperature in the range 50K < T < 320 K. We discuss our measurements on the basis of the temperature dependent properties of silicon and of the models related to carrier generation, transport and multiplication in high electric field. We conclude that SiPMs provide an excellent alternative to vacuum tube photomultipliers (PMTs) in low temperature environments, even better than in room temperature ones: in particular they excel in the interval 100K < T < 200K. (C) 2010 Elsevier B.V. All rights reserved.