Capillary waves in pulsed excimer laser crystallized amorphous silicon
Capillary waves in pulsed excimer laser crystallized amorphous silicon
复制标题
脉冲准分子激光结晶非晶硅中的毛细管波
DOI：
10.1063/1.115610
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发表时间：
1996
影响因子：
4
通讯作者：
P. Mei
中科院分区：
文献类型：
--
作者：
D. Fork;G. B. Anderson;J. Boyce;Richard I. Johnson;P. Mei
在石英上非晶硅的短脉冲激光结晶过程中，通过冻结硅熔体中激发的毛细管波而发生表面粗糙化。计算并讨论了这些毛细波的速度和粘性阻尼。凝固过程中硅的体积变化似乎将液态硅推向凝固的最后区域。通过透射电子显微镜和原子力显微镜观察到的薄膜厚度变化表明，单脉冲辐照薄膜的晶界和顶点处的薄膜厚度增加。这种效应在发生大横向晶粒生长的窄激光注量范围内最为明显。对于石英上 100 nm 厚的非晶硅薄膜，该范围从大约 520 mJ/cm2 延伸到 560 mJ/cm2；粗糙度标准偏差可高达 40 nm。这些效应对于大面积薄膜晶体管的制造具有重要意义。
During short‐pulse laser crystallization of amorphous silicon on quartz, surface roughening occurs via the freezing of capillary waves excited in the silicon melt. The velocity and viscous damping of these capillary waves is computed and discussed. Volume change of the silicon during solidification appears to drive liquid silicon toward the last areas of solidification. Film thickness variation observed by transmission electron microscopy and atomic force microscopy shows increased film thickness at grain boundaries, and vertices of single pulse irradiated films. This effect is most pronounced within a narrow laser fluence regime wherein large lateral grain growth occurs. For 100 nm thick amorphous silicon films on quartz, this regime extends from approximately 520 to 560 mJ/cm2; standard deviation roughness can be as large as 40 nm. These effects have important implications for large area thin film transistor manufacturing.