Proposal for an electrostrictive logic device with the epitaxial oxide heterostructure
Proposal for an electrostrictive logic device with the epitaxial oxide heterostructure
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DOI：
10.1038/s41598-020-71631-5
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发表时间：
2020-09
影响因子：
4.6
通讯作者：
Md Khirul Anam;Pratheek Gopalakrishnan;A. Sebastian;Ethan C. Ahn
中科院分区：
文献类型：
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作者：
Md Khirul Anam;Pratheek Gopalakrishnan;A. Sebastian;Ethan C. Ahn
电致伸缩材料用于信息处理器件的可能性已经得到了广泛的讨论，因为它可以通过克服传统MOSFET的亚阈值摆幅大于60 mV/ten的基本限制来实现低功率逻辑操作。然而，现有的电致伸缩FET应用方案通常采用完全理论和模拟的方法，因此缺乏对电致伸缩材料如何与沟道材料实现最佳接口的实际见解。在这里，我们提出了一种电致伸缩FET器件，将外延氧化物异质结构作为实现最大应变转移的理想材料平台。开关的发生是由于应力引起的记忆氧化物沟道层中氧空位浓度的变化。基于有限元模拟，我们发现，由于电致伸缩氧化层和记忆氧化层之间的外延界面，施加最小栅压可以在沟道层中产生高达108N/m2的应力。导电AFM实验进一步支持了所提出的器件的可行性，通过展示钙钛矿型氧化物薄膜的应力诱导电导调制，众所周知，该薄膜作为其他功能氧化层的外延生长的衬底。
The possible use of electrostrictive materials for information processing devices has been widely discussed because it could allow low-power logic operation by overcoming the fundamental limit of subthreshold swing greater than 60 mV/decade in conventional MOSFETs. However, existing proposals for electrostrictive FET applications typically adopt approaches that are entirely theoretical and simulative, thus lacking practical insights into how an electrostrictive material can be best interfaced with a channel material. Here we propose an electrostrictive FET device, involving the epitaxial oxide heterostructure as an ideal material platform for maximum strain transfer. The ON/OFF switching occurs due to a stress-induced concentration change of oxygen vacancies in the memristive oxide channel layer. Based on finite-element simulations, we show that the application of a minimal gate voltage bias can induce stress in the channel layer as high as 108N/m2owing to the epitaxial interface between the electrostrictive and memristive oxide layers. Conductive AFM experiments further support the feasibility of the proposed device by demonstrating the stress-induced conductivity modulation of a perovskite oxide thin film, SrTiO3, that is well known to serve as the substrate for epitaxial growth of other functional oxide layers.