Strain-effect transistors: Theoretical study on the effects of external strain on III-nitride high-electron-mobility transistors on flexible substrates
Strain-effect transistors: Theoretical study on the effects of external strain on III-nitride high-electron-mobility transistors on flexible substrates
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DOI：
10.1063/1.4935537
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发表时间：
2015-11
影响因子：
4
通讯作者：
Shahab Shervin;Seung Hwan Kim;M. Asadirad;Srikanth Ravipati;K. Lee;K. Bulashevich;J. Ryou;J. Ryou
中科院分区：
文献类型：
--
作者：
Shahab Shervin;Seung Hwan Kim;M. Asadirad;Srikanth Ravipati;K. Lee;K. Bulashevich;J. Ryou;J. Ryou
本文通过理论计算，提出了基于柔性III-氮化物高电子迁移率晶体管的应变效应晶体管(SETS)。我们发现，柔性衬底上的InAlGaN/GaN薄膜异质结的电子能带结构可以利用极性半导体材料的偏振特性，通过高自由度的外弯曲来改变。HEMT器件的传输特性，包括阈值电压和跨导，是由不同的外部应变控制的。通过弯曲柔性结构的凹面(弯曲条件)，增强了平衡的二维电子气(2DEG)。2DEG密度随弯曲条件下压应变的增加而减小并最终耗尽。根据外界应变的类型和大小，不同HEMT结构的工作模式会从耗竭模式转变为附魔模式，反之亦然。结果表明，该手术是一种安全有效的手术方法。
This paper presents strain-effect transistors (SETs) based on flexible III-nitride high-electron-mobility transistors (HEMTs) through theoretical calculations. We show that the electronic band structures of InAlGaN/GaN thin-film heterostructures on flexible substrates can be modified by external bending with a high degree of freedom using polarization properties of the polar semiconductor materials. Transfer characteristics of the HEMT devices, including threshold voltage and transconductance, are controlled by varied external strain. Equilibrium 2-dimensional electron gas (2DEG) is enhanced with applied tensile strain by bending the flexible structure with the concave-side down (bend-down condition). 2DEG density is reduced and eventually depleted with increasing compressive strain in bend-up conditions. The operation mode of different HEMT structures changes from depletion- to enchantment-mode or vice versa depending on the type and magnitude of external strain. The results suggest that the operation mo...