Improvement of SiO2/SiC Interface Properties by Nitrogen Radical Irradiation
Improvement of SiO2/SiC Interface Properties by Nitrogen Radical Irradiation
复制标题
氮自由基辐照改善 SiO2/SiC 界面性能
DOI：
10.1143/jjap.42.l575
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发表时间：
2003
影响因子：
1.5
通讯作者：
T. Fuyuki
中科院分区：
文献类型：
--
作者：
Yuusuke Maeyama;H. Yano;Y. Furumoto;T. Hatayama;Y. Uraoka;T. Fuyuki
研究了N自由基辐照对SiO2/4 H-SiC和6 H-SiC界面性能的影响。N自由基辐照干燥SiC上的热氧化物。X射线光电子能谱（XPS）测试表明，在SiO2/SiC界面上引入了1at%的N原子。为了评估界面态密度，使用n型金属氧化物半导体（MOS）结构测量高频和低频电容-电压特性。通过N自由基的照射，降低了界面态密度。薄的氧化物被发现是有效的，在降低界面态密度。提高了n沟道反型MOS场效应晶体管的沟道迁移率。N原子的引入对改善SiO2/SiC界面性能起到了有利的作用。
Effects of nitrogen (N) radical irradiation on SiO2/4H- and 6H-SiC interface properties were investigated. N radicals were irradiated to dry thermal oxides on SiC. X-ray photoelectron spectroscopy measurements revealed that N atoms were introduced into the SiO2/SiC interface with 1 at%. To evaluate the interface state density, high and low frequency capacitance - voltage characteristics were measured using n-type metal-oxide-semiconductor (MOS) structures. The interface state density was reduced by irradiation of N radicals. Thin oxides were found to be effective in reducing the interface state density. The channel mobility of n-channel inversion-mode MOS field-effect transistors was improved. The N atom incorporation gives a favorable effect for the improvement of SiO2/SiC interface properties.