Magnetically induced spin-dependent photoemission from p-GaAs(Cs,O) into vacuum.
Magnetically induced spin-dependent photoemission from p-GaAs(Cs,O) into vacuum.
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从 p-GaAs(Cs,O) 到真空中的磁感应自旋相关光发射。
DOI：
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发表时间：
2008
期刊：
影响因子：
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通讯作者：
A. Terekhov
中科院分区：
文献类型：
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作者：
D. Orlov;V. Alperovich;A. Terekhov
$p的光取向电子的自旋相关发射 [001 pdf 1st-31files] ext{Cs}， 在垂直于表面的磁场中，实验观察到进入真空的ext{O}）$。这种现象在模型中得到了解释，该模型考虑了半导体-真空界面处电子$g$因子的跳跃。由于这种跳跃，半导体表面上的有效电子亲和势取决于光学取向的电子自旋和磁场的相互方向，导致自旋相关的光电发射。结果表明，所观察到的效应可用于确定半导体中的自旋扩散长度。
A spin-dependent emission of optically oriented electrons from $p ext{-GaAs}( ext{Cs}, ext{O})$ into vacuum was experimentally observed in a magnetic field normal to the surface. This phenomenon is explained within the model which takes into account the jump in the electron $g$ factor at the semiconductor-vacuum interface. Due to this jump, the effective electron affinity on the semiconductor surface depends on the mutual direction of optically oriented electron spins and the magnetic field, resulting in the spin-dependent photoemission. It is demonstrated that the observed effect can be used for the determination of spin diffusion length in semiconductors.