Voltage-tunable piezoelectrically-transduced single-crystal silicon micromechanical resonators
Voltage-tunable piezoelectrically-transduced single-crystal silicon micromechanical resonators
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DOI：
10.1016/j.sna.2003.10.021
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发表时间：
2004-03
影响因子：
4.6
通讯作者：
G. Piazza;R. Abdolvand;G. Ho;F. Ayazi
中科院分区：
文献类型：
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作者：
G. Piazza;R. Abdolvand;G. Ho;F. Ayazi
报道了一种新型的高Q单晶硅(SCS)谐振器，这种谐振器是由压电驱动和传感的，中心频率可调。谐振元件由SOI晶片的SCS器件层制成。以一种独特的方式，压电换能器与谐振器中心频率的电容式微调相结合，以补偿任何工艺变化。在50mTorr真空下，测得固支梁谐振器1.7 MHz第一谐振模的品质因数高达6200。制作的谐振器还成功地激励了高阶模式，并在接近17 MHz的频率下显示出大于2000(真空下)的品质因数。通过在0-20V范围内施加直流电压，测量了719 kHz谐振器的6 kHz调谐范围。
This paper reports on a new class of high-Q single-crystal silicon (SCS) resonators that are piezoelectrically actuated and sensed, and have voltage-tunable center frequencies. The resonating element is made out of the SCS device layer of a SOI wafer. In a unique manner, piezoelectric transduction was integrated with capacitive fine-tuning of the resonator center frequencies to compensate for any process variations. Quality factor as high as 6200 was measured for the 1.7MHz first resonance mode of a clamped–clamped beam resonator in 50mTorr vacuum. Higher order modes of the fabricated resonators were also successfully actuated and demonstrated quality factors larger than 2000 (under vacuum) at frequencies approaching 17MHz. A 6kHz tuning range was measured for a 719kHz resonator by applying a dc voltage in the range of 0–20V.