The Role of Ti Capping Layer in HfOx-Based RRAM Devices
The Role of Ti Capping Layer in HfOx-Based RRAM Devices
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DOI：
10.1109/led.2014.2334311
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发表时间：
2014-09-01
影响因子：
4.9
通讯作者：
Kwong, Dim-Lee
中科院分区：
文献类型：
--
作者：
Fang, Zheng;Wang, Xin Peng;Kwong, Dim-Lee
在这封信中，我们研究了钛覆盖层在HfOx基电阻式随机存取存储器（RRAM）器件的存储器性能的作用。结果表明，随着Ti覆盖层厚度的增加，器件的初始漏电流增加，形成电压降低。此外，对于薄Ti层，
In this letter, we examine the role of the Ti capping layer in HfOx-based resistive random access memory (RRAM) devices on the memory performance. It is found that with a thicker Ti capping layer, the fresh device initial leakage current increases and as a result, the forming voltage decreases. In addition, with a thin Ti layer of