Formation of Inert Bi2Se3(0001) Cleaved Surface
Formation of Inert Bi2Se3(0001) Cleaved Surface
复制标题
DOI：
10.1021/cg201163v
复制
发表时间：
2011-12-01
影响因子：
3.8
通讯作者：
Tereshchenko, O. E.
中科院分区：
文献类型：
--
作者：
Atuchin, V. V.;Golyashov, V. A.;Tereshchenko, O. E.
采用布里奇曼法并使用旋转热场生长出高质量的无夹杂物 Bi2Se3 晶体。通过解理形成了具有优异晶体质量的大面积原子级平坦的 Bi2Se3(0001) 表面。通过反射高能电子衍射、原子力显微镜 (AFM)、扫描隧道显微镜 (STM)、光谱椭圆光度术和 X 射线光电子能谱评估了表面的化学和微观结构特性。通过比较岩芯水平光谱、AFM 和 STM 表明，在环境条件下的空气中放置一个多月后，没有检测到 Bi2Se3(0001) 表面氧化。
A high quality inclusion-free Bi2Se3 crystal has been grown by the Bridgman method with the use of a rotating heat field. A large-area atomically flat Bi2Se3(0001) surface of excellent crystallographic quality has been formed by cleavage. Chemical and microstructural properties of the surface have been evaluated with reflection high-energy electron diffraction, atomic force microscopy (AFM), scanning tunneling microscopy (STM), spectroscopic ellipsometry, and X-ray photoelectron spectroscopy. There was no Bi2Se3(0001) surface oxidation detected after over a month in air under ambient conditions as shown by comparative core level spectroscopy, AFM, and STM.