Growth of Large-Scale Praseodymium Hexaborides (PrB6) Nanowires and Enhanced Field-Emission Performance

Growth of Large-Scale Praseodymium Hexaborides (PrB6) Nanowires and Enhanced Field-Emission Performance
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大规模六硼化镨 (PrB6) 纳米线的生长和增强的场发射性能

DOI:
10.1166/jno.2020.2722
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发表时间:
2020-02
影响因子:
0.6
通讯作者:
Xie Wenhe
Xie Wenhe
中科院分区:
工程技术4区
文献类型:
--
作者:
Xu Junqi;Wang Yanrui;Wang Wenjie;Xu Zijun;Jia Yonglei;Zhang Y;i;Huang Minghui;Wang Lubin;Liu Fengyuan;Xie Wenhe

文献摘要

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大规模的PrB 6纳米线的制备是通过一个有效的,无催化剂,和一个简单的低压化学气相沉积(LPCVD)过程。这些纳米线,其特征在于详细的各种分析仪器,证明了大的纵横比和高单晶 沿着垂直于(001)晶面的[001]晶向沿着生长。场致电子发射测试表明,PrB_6晶体具有较低的开启电场(Eto,2.32 V/μm),阈值电场(Ethr, 4.28 V/μm)、高的场增强因子(β,2336)和稳定的场发射电流密度(J)。研究了场致电子发射参数J、Eto和β与阴极间隙d的关系, 当d从500 μm增加到800 μm时,这些优异的性能表明PrB 6产物在冷场发射阴极应用中可能是有前途的发射体。
Large-scale PrB6 nanowires were fabricated by an effective, catalyst-free, and a simple low-pressure chemical vapor deposition (LPCVD) process. These nanowires, characterized in detail by various analytical instruments, demonstrated the large aspect ratio and high single-crystalline grown along the [001] crystal direction perpendicular to the (001) crystal plane. The field electron emission equipment tests manifest that the asgrown PrB6 products have a low turn-on field (Eto, 2.32 V/μm), a threshold field (Ethr, 4.28 V/μm), a high field enhancement factor (β, 2336), as well as a stable current-density (J) of field-emission. The relationships of the field electron emission parameters, such as J, Eto, and β versus cathode gap (d), have been established when d is increased from 500 μm to 800 μm. The outstanding properties suggest that the PrB6 products may be promising emitters in the cold-field-emission cathode application.