Lattice Distortion at SiO2/Si(001) Interface Studied with High-Resolution Rutherford Backscattering Spectroscopy/Channeling
Lattice Distortion at SiO2/Si(001) Interface Studied with High-Resolution Rutherford Backscattering Spectroscopy/Channeling
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使用高分辨率卢瑟福背散射光谱/通道研究 SiO2/Si(001) 界面处的晶格畸变
DOI：
10.1143/jjap.45.2467
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发表时间：
2006
影响因子：
1.5
通讯作者：
T. Hattori
中科院分区：
文献类型：
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作者：
K. Nakajima;Motofumi Suzuki;K. Kimura;Masashi Yamamoto;A. Teramoto;T. Ohmi;T. Hattori
在SiO2/Si界面的过渡结构的生长温度依赖性的高分辨率卢瑟福背散射光谱/沟道研究。在界面处发现Si晶格畸变。这种畸变从界面传播超过2nm。结果表明，1100 °C湿氧化法生长的SiO_2/Si比900 °C湿氧化法生长的SiO_2/Si晶格畸变小。这可以解释为在高温下SiO2的粘性流动引起的应变SiO2网络的松弛。
The growth-temperature dependence of the transition structure at the SiO2/Si interface is studied by high-resolution Rutherford backscattering spectroscopy/channeling. A Si lattice distortion is found at the interface. Such distortion propagates more than 2 nm from the interface. It is shown that the SiO2/Si grown by wet oxidation at 1100 °C has a smaller lattice distortion than that grown at 900 °C. This can be explained in terms of the relaxation of the strained SiO2 network caused by the viscous flow of SiO2 at high temperatures.
非晶 Nb-Si 薄层的局部结构和热致结构演化
DOI：
--
发表时间：
2016
期刊：
影响因子：
--
作者：
M. Naito;Y. Kobayashi;M. Ishimaru;L. Berge;L. Dumoulin;C. A. Marrache-Kikuchi
通讯作者：
C. A. Marrache-Kikuchi