Low temperature growth of highly crystallized silicon thin films using hydrogen and argon dilution
Low temperature growth of highly crystallized silicon thin films using hydrogen and argon dilution
复制标题
使用氢气和氩气稀释低温生长高度结晶的硅薄膜
DOI：
10.1016/s0022-3093(98)00342-1
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发表时间：
1998
影响因子：
3.5
通讯作者：
P. Cabarrocas
中科院分区：
文献类型：
--
作者：
S. Hamma;P. Cabarrocas
采用逐层法在本征氢化非晶硅衬底上沉积了100~250℃的非掺杂微晶硅薄膜。原位椭圆偏振光谱测量确定了薄膜性质的演变。在200℃和250℃沉积的薄膜致密而光滑，而在100℃和150℃沉积的薄膜疏松而粗糙。用Ar稀释法可以避免在200℃以下沉积的薄膜质量较差。在氢等离子体处理过程中，当Ar加入到氢中时，在100C和150℃下沉积的薄膜具有与250℃下沉积的薄膜几乎相同的光学和结构性质，并且在a-Si：H衬底和μc-Si：H薄膜之间获得了陡峭的界面。
Undoped microcrystalline silicon thin films were deposited at substrate temperatures ranging from 100°C up to 250°C on intrinsic hydrogenated amorphous silicon using the layer by layer technique. In situ spectroscopic ellipsometry measurements were performed to determine the evolution of the properties of the films. The films deposited at 200 and 250°C are dense and smooth while those deposited at 100 and 150°C are porous and rough. The poor quality of the films deposited below 200°C can be avoided by the use of argon dilution. Indeed, the films deposited at 100 and 150°C when argon is added to hydrogen during the hydrogen plasma treatment have almost the same optical and structural properties as those deposited at 250°C. Moreover, an abrupt interface between the a-Si:H substrate and the μc-Si:H film is achieved.