Electro-opto-mechano driven reversible multi-state memory devices based on photocurrent in Bi(0.9)Eu(0.1)FeO(3)/La(0.67)Sr(0.33)MnO(3)/PMN-PT heterostructures.
Electro-opto-mechano driven reversible multi-state memory devices based on photocurrent in Bi(0.9)Eu(0.1)FeO(3)/La(0.67)Sr(0.33)MnO(3)/PMN-PT heterostructures.
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基于 Bi0.9Eu0.1FeO3/La0.67Sr0.33MnO3/PMN-PT 异质结构光电流的电光机械驱动可逆多态存储器件
作者：
对于日益增长的复杂和多功能光电子学的需求，具有广泛新功能的单一器件具有极大的吸引力。多场耦合技术已经引起了人们的极大关注，因为它导致了可以在几种外部刺激(如磁场、电场、电流、光、应变等)下同时工作的材料，这使得每个单元可以存储多比特的信息，从而提高了存储密度。在这项工作中，我们报道了一种基于Bi0.9Eu0.1FeO(BeFO)/La0.67Sr0.33MnO(LSMO)/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3(PMN-PT)异质结的光电驱动可逆多态存储器件。研究发现，在光照、外加应变和铁电极化反转的调制下，铂/BeFO界面的势垒高度和耗尽区宽度的变化可以改变短路电流密度。这项工作为开发基于BiFeO_3异质结的高性能电-光-机集成器件开辟了新的具有动态控制的器件设计特征的出现之路。偏振开关、光和压电应变之间的相互作用。
A single device with extensive new functionality is highly attractive for the increasing demands for complex and multifunctional optoelectronics. Multi-field coupling has been drawing considerable attention because it leads to materials that can be simultaneously operated under several external stimuli (e.g. magnetic field, electric field, electric current, light, strain, etc.), which allows each unit to store multiple bits of information and thus enhance the memory density. In this work, we report an electro–opto–mechano-driven reversible multi-state memory device based on photocurrent in Bi0.9Eu0.1FeO3 (BEFO)/La0.67Sr0.33MnO3 (LSMO)/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) heterostructures. It is found that the short-circuit current density (Jsc) can be switched by the variation of the potential barrier height and depletion region width at the Pt/BEFO interface modulated by light illumination, external strain, and ferroelectric polarization reversal. This work opens up pathways toward the emergence of novel device design features with dynamic control for developing high-performance electric–optical–mechanism integrated devices based on the BiFeO3-based heterostructures. The mutual interaction between polarization switching, light and piezoelectric strain.
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