Over 30% efficient InGaP/GaAs tandem solar cells
Over 30% efficient InGaP/GaAs tandem solar cells
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DOI：
10.1063/1.118419
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发表时间：
1997-01
影响因子：
4
通讯作者：
T. Takamoto;E. Ikeda;H. Kurita;M. Ohmori
中科院分区：
文献类型：
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作者：
T. Takamoto;E. Ikeda;H. Kurita;M. Ohmori
在1个太阳空气质量1.5的总光照下，实现了4cm ~ 2的实用大面积InGaP/GaAs双端单片叠层太阳电池，其效率达到30.28%。我们报告的串联电池性能的改善，通过引入双异质（以下DH）结构InGaP隧道结，其中InGaP层被包围的高带隙AlInP屏障。AlInP势垒的DH结构使InGaP隧道结的峰值电流增大。发现直接在InGaP顶部电池下方的AlInP阻挡层（其占据背表面场（下文称为BSF）层的一部分）在反射顶部电池中的少数载流子方面相当有效。AlInP BSF层不仅形成高势垒，而且防止锌在外延生长期间从高掺杂隧道结向顶部电池扩散。此外，InGaP隧道结降低了GaAs隧道结中存在的吸收损耗，并增加了光生Curr。
A two-terminal monolithic InGaP/GaAs tandem solar cell with a new efficiency record of 30.28% is realized with a practical large area of 4 cm2 under one-sun air-mass 1.5 global illumination. We report improvements of the tandem cell performance by introducing a double-hetero (hereafter DH) structure InGaP tunnel junction, in which the InGaP layers are surrounded by high band gap AlInP barriers. The DH structure by AlInP barriers increase the peak current of InGaP tunnel junction. The AlInP barrier directly below the InGaP top cell, which takes the part of a back surface field (hereafter BSF) layer, is found to be considerably effective in reflecting minority carriers in the top cell. The AlInP BSF layer does not only form a high potential barrier but also prevents the diffusion of zinc from a high doped tunnel junction toward the top cell during epitaxial growth. Furthermore, an InGaP tunnel junction reduces the absorption loss, which exists in a GaAs tunnel junction, and increases the photogenerated curr...