Topological layer switch technique for monolithically integrated electrostatic XYZ-stage
Topological layer switch technique for monolithically integrated electrostatic XYZ-stage
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单片集成静电 XYZ 平台的拓扑层交换技术
DOI：
10.1109/memsys.2007.4432992
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发表时间：
2007
期刊：
影响因子：
--
通讯作者：
H. Toshiyoshi
中科院分区：
文献类型：
--
作者：
Kazuhiro Takahashi;M. Mita;Hiroyuki Fujita;H. Toshiyoshi
我们报告了一个单片XYZ阶段与静电梳状机制集成在只有两个硅层和三个光刻步骤，拓扑开关的层的分配电气和弹性元件。XY台在X和Y方向上独立地移动19 μ m，并且还在对角方向上移动。我们已经成功地证明了最大2.12妈妈在Z方向与施加电压为200 V。
We report a monolithic XYZ-stage with electrostatic comb-mechanisms integrated in only two silicon layers and by three photolithography steps that topologically switches the allocation of layer for electrical and elastic components. The XY-stage moved in the X- and the Y-direction by 19 mum independently, and also in the diagonal direction. We have successfully demonstrated maximum 2.12 mum in the Z-direction with applied voltage of 200 V.