CuSbSe2-assisted sintering of CuInSe2 at low temperature
CuSbSe2-assisted sintering of CuInSe2 at low temperature
复制标题
CuSbSe2辅助CuInSe2低温烧结
DOI：
10.1007/s10853-012-6385-3
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发表时间：
2012-10-01
影响因子：
4.5
通讯作者：
Huang, Fuqiang
中科院分区：
文献类型：
--
作者：
Yang, Chongyin;Wang, Yaoming;Huang, Fuqiang
CuSbSe₂类三元黄铜矿化合物被发现是一种优异的助剂，可在较低温度下促进由Cu₂Se和In₂Se₃制备CuInSe₂（CIS）的反应烧结，CuInSe₂是最具前景的薄膜太阳能电池中的吸光材料。CuSbSe₂具有低熔点和良好的润湿性，可作为液相烧结助熔剂，有效提高烧结过程中的原子扩散速率，并且两种原料提供化学驱动力。通过有意将CuSbSe₂掺杂到CuInSe₂中，结晶良好的陶瓷样品可在500℃下完美烧结，在低掺杂水平（≤0.5 mol%）下不会明显损害光吸收。进行了XPS分析以确定Sb的晶格位置和价态。在CuSbSe₂掺杂的Cu(In,Ga)Se₂（CIGS）薄膜中也发现了类似的促进烧结的效果。
Ternary chalcopyrite-like compound of CuSbSe2 was found to be an excellent agent to assist the reactive sintering of CuInSe2 (CIS) from Cu2Se and In2Se3 at lower temperature, which is the light absorber material in the most promising thin film solar cells. With low melting point and excellent wettability, CuSbSe2 acts as a liquid-phase sintering flux to efficaciously increase atomic diffusion rate during the sintering process, and furthermore the two raw materials provide chemical driving force. By the intentional introduction of CuSbSe2 doping into CuInSe2, the well-crystallized ceramic samples can be perfectly sintered at 500 °C, without obviously scarifying light absorption at the low doping level (≤0.5 mol%). The XPS analyses were performed to determine the crystal lattice location and valence state of Sb. Similar sintering-promoting effect was also found in the CuSbSe2-doped Cu(In,Ga)Se2 (CIGS) film.