Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloys
Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloys
复制标题
GeSbTe 合金中 Si 台阶边缘应变诱导的范德华调制和经典外延
作者：
E. Zallo;S. Cecchi;J. Boschker;A. Mio;F. Arciprete;S. Privitera;R. Calarco
本工作显示了一条路线，以设计应变梯度之间的界面基板和货车范德华粘结材料。后者预计将从衬底上解耦生长并完全松弛，因此，根据定义，与传统的应变工程不兼容。通过使用钝化的邻位表面，我们能够在层状硫属化物的台阶边缘处插入应变，如由外延层在相对于衬底取向的生长方向上的倾斜所证明的。经典外延和货车德瓦尔斯外延之间的相互作用可以通过精确选择衬底的误切来调制。在3-4°台阶Si衬底上外延生长GexSb_2 Te_（3 +x）晶体，获得了高质量的GexSb_2 Te_（3 +x）晶体，其组成接近Ge_1 Sb_2 Te_4，空位层有序度提高。这些结果突出了在货车德瓦尔斯体系中建立和控制应变是可能的，因此通过直接采用邻位衬底为外延层的功能化开辟了新的前景。
The present work displays a route to design strain gradients at the interface between substrate and van der Waals bonded materials. The latter are expected to grow decoupled from the substrates and fully relaxed and thus, by definition, incompatible with conventional strain engineering. By the usage of passivated vicinal surfaces we are able to insert strain at step edges of layered chalcogenides, as demonstrated by the tilt of the epilayer in the growth direction with respect of the substrate orientation. The interplay between classical and van der Waals epitaxy can be modulated with an accurate choice of the substrate miscut. High quality crystalline GexSb2Te3+x with almost Ge1Sb2Te4 composition and improved degree of ordering of the vacancy layers is thus obtained by epitaxial growth of layers on 3–4° stepped Si substrates. These results highlight that it is possible to build and control strain in van der Waals systems, therefore opening up new prospects for the functionalization of epilayers by directly employing vicinal substrates.
具有相关性的非周期层状结构的 X 射线衍射：混合 Aurivilius 薄膜的分析计算和实验
DOI：
10.1107/s0108767311044874
发表时间：
2012
期刊：
Acta crystallographica. Section A, Foundations of crystallography
影响因子：
--
作者：
V. S. Kopp;V. M. Kaganer;J. Schwarzkopf;F. Waidick;T. Remmele;A. Kwasniewski;M. Schmidbauer
通讯作者：
M. Schmidbauer