A low-temperature-grown oxide diode as a new switch element for high-density, nonvolatile memories
A low-temperature-grown oxide diode as a new switch element for high-density, nonvolatile memories
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DOI：
10.1002/adma.200601025
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发表时间：
2007-01-08
影响因子：
29.4
通讯作者：
Park, Bae Ho
中科院分区：
文献类型：
--
作者：
Lee, Myoung-Jae;Seo, Sunae;Park, Bae Ho
已制造出一种单二极管/单电阻结构 Pt/NiO/Pt/p-NiOx/n-TiOx/Pt。这种新颖的结构在正向偏压下表现出双稳态电阻切换，而二极管在反向偏压下抑制 Pt/NiO/Pt 存储单元中的电阻切换（见图）。其低加工温度、小单元尺寸以及优异的整流特性，使这种 Pt/p-NiOx/n-TiOx/Pt 二极管结构成为具有 3D 堆叠和交叉点结构的高密度非易失性存储器件的有前景的开关元件。
A one-diode/one-resistor structure, Pt/NiO/Pt/p-NiOx/n-TiOx/Pt, has been fabricated. This novel structure exhibits bistable resistance switching under forward bias, while the diode suppresses resistance switching in the Pt/NiO/Pt memory cell under reverse bias (see figure). Its low processing temperature and small cell size, as well as excellent rectifying characteristics, make this Pt/p-NiOx/n-TiOx/Pt diode structure a promising switch element for high-density, nonvolatile memory devices with 3D stack and cross-point structures.