Lifetime and spin relaxation time measurements of micro-fabricated GaAs tips
Lifetime and spin relaxation time measurements of micro-fabricated GaAs tips
复制标题
微加工 GaAs 尖端的寿命和自旋弛豫时间测量
DOI：
10.1143/jjap.39.7093
复制
发表时间：
2000
期刊：
影响因子：
--
通讯作者：
F. Minami
中科院分区：
文献类型：
--
作者：
R. Shinohara;K. Yamaguchi;H. Hirota;Y. Suzuki;T. Manago;H. Akinaga;T. Kuroda;F. Minami
圆偏振光抽运GaAs针尖有望应用于自旋极化电子源，一些研究小组最近开始尝试利用GaAs针尖研制自旋极化扫描隧道显微镜（SP-STM）。到目前为止，我们已经用GaAs针尖在SP-STM中探测到了磁性样品的自旋相关隧穿电流。然而，有很少的信息有关的寿命和自旋弛豫时间的GaAs尖。在这项研究中，时间分辨光致发光（TR-PL）从GaAs微尖测量，以评估寿命和自旋弛豫时间。
Circularly polarized light pumped GaAs tip is expected for application to a spin-polarized electron source, and, development of spin-polarized scanning tunneling microscope (SP-STM) using the GaAs tip has recently been attempted by some research groups. So far spin dependent tunneling current has been detected for the magnetic sample in SP-STM using the GaAs tip. However, there was very little information concerning to lifetime and spin relaxation time of electrons in the GaAs tips. In this study, time-resolved photoluminescence (TR-PL) from GaAs microtips was measured to evaluate lifetime and spin relaxation time.