MTJ Magnetization Switching Mechanisms for IoT Applications
MTJ Magnetization Switching Mechanisms for IoT Applications
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DOI：
10.1145/3194554.3194624
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发表时间：
2018-05
期刊：
影响因子：
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通讯作者：
Abdelrahman G. Qoutb;E. Friedman
中科院分区：
文献类型：
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作者：
Abdelrahman G. Qoutb;E. Friedman
在物联网应用的背景下描述了基于MTJ的MRAM的不同磁化机制、结构和电特性。基于MTJ的MRAM提供非易失性（高保持时间）、低功耗和高速。这种存储器具有广泛的应用。一个重要的例子是IoT。磁化机制的比较研究提供了对MTJ结构和磁化机制最佳支持不同物联网应用的见解。
Different magnetization mechanisms, structures, and electrical properties of MTJ-based MRAM are described in the context of IoT applications. MTJ-based MRAM provides non-volatility (high retention time), low power, and high speed. This memory has a broad variety of applications. One important example is IoT. A comparative study of the magnetization mechanisms provides insight into which MTJ structures and magnetization mechanisms best support different IoT applications.