Electroluminescence induced by photoluminescence excitation in GaInN/GaN light-emitting diodes
Electroluminescence induced by photoluminescence excitation in GaInN/GaN light-emitting diodes
复制标题
DOI：
10.1063/1.3258488
复制
发表时间：
2009-11
影响因子：
4
通讯作者：
M. Schubert;Q. Dai;Jiuru Xu;J. Kim;E. Schubert
中科院分区：
文献类型：
--
作者：
M. Schubert;Q. Dai;Jiuru Xu;J. Kim;E. Schubert
发光二极管的GaInN/GaN量子阱（QW）有源区中的载流子的405 nm选择性光激发产生的光发射揭示了两个复合通道。第一个复合通道是GaInN量子阱中光激发载流子的复合。第二复合沟道由从GaInN QW有源区泄漏出来的载流子形成，在正向方向上自偏置器件，感应正向电流，并且随后以空间分布的方式在GaInN有源区中复合。结果表明动态载流子输运涉及的主动，限制，和接触区的设备。
Optical emission resulting from 405 nm selective photoexcitation of carriers in the GaInN/GaN quantum well (QW) active region of a light-emitting diode reveals two recombination channels. The first recombination channel is the recombination of photoexcited carriers in the GaInN QWs. The second recombination channel is formed by carriers that leak out of the GaInN QW active region, self-bias the device in forward direction, induce a forward current, and subsequently recombine in the GaInN active region in a spatially distributed manner. The results indicate dynamic carrier transport involving active, confinement, and contact regions of the device.