Device and Architecture Outlook for Beyond CMOS Switches
Device and Architecture Outlook for Beyond CMOS Switches
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DOI：
10.1109/jproc.2010.2066530
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发表时间：
2010-12-01
影响因子：
20.6
通讯作者：
Welser, Jeff
中科院分区：
文献类型：
--
作者：
Bernstein, Kerry;Cavin, Ralph K., III;Welser, Jeff
互补金属氧化物半导体（CMOS）的基本局限性迟早会终结。许多独特的开关已经被提出作为替代，其中许多甚至不使用电子电荷作为状态变量。相反，这些纳米级结构在自旋、激子、光子、磁性、量子甚至热域中传递令牌。这些新型交换机的紧急物理行为和特性可以通过启用非常独特的架构来补充特定算法或工作负载的执行。最终，利用这些不寻常的响应将扩展高性能计算的吞吐量。替代令牌还需要新的传输机制来取代基于电荷的计算的传统芯片线互连方案。在后CMOS技术中，缩放的新的内在限制可能最终由热力学熵和香农噪声所限制。
Sooner or later, fundamental limitations destine complementary metal-oxide-semiconductor (CMOS) scaling to a conclusion. A number of unique switches have been proposed as replacements, many of which do not even use electron charge as the state variable. Instead, these nanoscale structures pass tokens in the spin, excitonic, photonic, magnetic, quantum, or even heat domains. Emergent physical behaviors and idiosyncrasies of these novel switches can complement the execution of specific algorithms or workloads by enabling quite unique architectures. Ultimately, exploiting these unusual responses will extend throughput in high-performance computing. Alternative tokens also require new transport mechanisms to replace the conventional chip wire interconnect schemes of charge-based computing. New intrinsic limits to scaling in post-CMOS technologies are likely to be bounded ultimately by thermodynamic entropy and Shannon noise.