Avalanche Multiplication and Excess Noise in InAs Electron Avalanche Photodiodes at 77 K
Avalanche Multiplication and Excess Noise in InAs Electron Avalanche Photodiodes at 77 K
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DOI：
10.1109/jqe.2011.2128299
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发表时间：
2011-06-01
影响因子：
2.5
通讯作者：
Tan, Chee Hing
中科院分区：
文献类型：
--
作者：
Marshall, Andrew Robert Julian;Vines, Peter;Tan, Chee Hing
报道了77K下InAs雪崩光电二极管的碰撞电离、雪崩倍增和过量噪声的研究结果。结果表明，空穴碰撞电离在继续以电子雪崩光电二极管的形式工作的实际器件中可以忽略不计，就像在室温下一样。提出了一个新的能够模拟77K倍增的电子电离系数，结果表明，在没有过大的隧道电流的情况下，在实际器件中可以实现显著的倍增。讨论了在室温和77K之间观察到的特性变化。这篇文章有助于论证实用的InAs电子雪崩光电二极管的潜力，工作冷却。
The findings of a study of impact ionization, avalanche multiplication and excess noise in InAs avalanche photodiodes at 77 K are reported. It is shown that hole impact ionization is negligible in practical devices which continue to operate as electron avalanche photodiodes, as they do at room temperature. A new electron ionization coefficient capable of modeling multiplication at 77 K is presented and it is shown that significant multiplication can be achieved in practical devices without excessive tunneling currents. The characteristic changes observed between room temperature and 77 K are discussed. This paper helps to demonstrate the potential for practical InAs electron avalanche photodiodes, operating cooled.