Detection of Be dopant pairing in VLS grown GaAs nanowires with twinning superlattices
Detection of Be dopant pairing in VLS grown GaAs nanowires with twinning superlattices
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DOI：
10.1088/1361-6528/acde84
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发表时间：
2023-09-17
期刊：
影响因子：
3.5
通讯作者：
Lauhon，Lincoln J.
中科院分区：
文献类型：
--
作者：
Mead，Christopher;Huang，Chunyi;Lauhon，Lincoln J.
控制掺杂剂在纳米线中的分布对于调节其电子性质是必不可少的，但是纳米线微结构中的扰动可能会影响掺杂。相反，掺杂剂可用于控制纳米线微结构，包括孪生超晶格（TSL）-孪生平面的周期性阵列的产生。在这里，Be掺杂剂的空间分布的GaAs纳米线与TSL的研究使用原子探针层析成像。观察到径向和轴向方向上的均匀掺杂剂分布，表明掺杂剂分布与纳米线微结构的解耦。虽然掺杂剂的分布是微观均匀的，径向分布函数分析发现，1%的Be原子发生在替代间隙对。配对证实了基于低缺陷形成能的理论预测。这些发现表明，使用掺杂剂来设计微结构并不一定意味着掺杂剂分布不均匀。
Control over the distribution of dopants in nanowires is essential for regulating their electronic properties, but perturbations in nanowire microstructure may affect doping. Conversely, dopants may be used to control nanowire microstructure including the generation of twinning superlattices (TSLs)—periodic arrays of twin planes. Here the spatial distribution of Be dopants in a GaAs nanowire with a TSL is investigated using atom probe tomography. Homogeneous dopant distributions in both the radial and axial directions are observed, indicating a decoupling of the dopant distribution from the nanowire microstructure. Although the dopant distribution is microscopically homogenous, radial distribution function analysis discovered that 1% of the Be atoms occur in substitutional-interstitial pairs. The pairing confirms theoretical predictions based on the low defect formation energy. These findings indicate that using dopants to engineer microstructure does not necessarily imply that the dopant distribution is non-uniform.