CONTINUOUS AND DISCONTINUOUS SEMICONDUCTOR-METAL TRANSITION IN SAMARIUM MONOCHALCOGENIDES UNDER PRESSURE
CONTINUOUS AND DISCONTINUOUS SEMICONDUCTOR-METAL TRANSITION IN SAMARIUM MONOCHALCOGENIDES UNDER PRESSURE
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DOI：
10.1103/physrevlett.25.1430
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发表时间：
1970-01-01
影响因子：
8.6
通讯作者：
MAINES, RG
中科院分区：
文献类型：
--
作者：
JAYARAMA.A;NARAYANA.V;MAINES, RG
高压下SmS的电阻率和晶格常数的测量表明，室温下SmS在6.5kbar下发生4f → 5d电子跃迁，而SmTe和SmSe在很宽的压力范围内发生4f → 5d电子跃迁. Sm硫族化合物中的压致电子-金属转变及其压力-体积关系与Sm 2+向Sm 3+的转变一致。这些材料的光吸收测量值与压力下的电阻率数据有很好的相关性。Sm硫属化物中的载流子到金属的转变似乎符合Falicov和Kimball最近提出的具有局域态和导带的系统模型。
Resistivity and lattice-constant measurements under high pressure on SmS show that a 4 f→ 5 d electronic transition in SmS occurs discontinuously at 6.5 kbar at room temperature, whereas such a transition takes place continuously over a broad pressure range in SmTe and SmSe. The pressure-induced semiconductor-to-metal transition in the Sm chalcogenides and their pressure-volume relationship are consistent with the conversion of Sm 2+ to Sm 3+. Optical-absorption measurements in these materials correlate well with the resistivity data under pressure. The semiconductor-to-metal transition in Sm chalcogenides appears to fit the model recently proposed by Falicov and Kimball for a system with a localized state and a conduction band.