Effects of phosphorus on stress of multi-stacked polysilicon film and single crystalline silicon
Effects of phosphorus on stress of multi-stacked polysilicon film and single crystalline silicon
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DOI：
10.1088/0960-1317/9/3/306
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发表时间：
1999-09-01
影响因子：
2.3
通讯作者：
Wee, DM
中科院分区：
文献类型：
--
作者：
Lee, CS;Lee, JH;Wee, DM
在多层堆叠的多晶硅膜中，根据掺杂剂分布和磷原子和氧原子堆积的多晶硅/多晶硅界面来检查应力。磷掺杂在薄膜中引入了压应力。在界面处形成的薄氧化层是控制多层膜中应力梯度的重要因素。使用多晶硅膜的对称堆叠可以使这种界面效应最小化，并且对于5.3 μ m厚的多晶硅层，导致-0.15 MPa μ m（-1）的低应力梯度。在单晶硅中，磷掺杂引起了拉应力。磷的晶格膨胀系数β为4.5 × 10 ~（-24）cm ~（3），是用高分辨率X射线摇摆曲线测得的。在晶格膨胀理论的基础上引入了应力模型，计算了掺杂引起的应力和应力梯度。
In multi-stacked polysilicon films, the stress was examined in terms of dopant distribution and the polysilicon/polysilicon interface at which phosphorus and oxygen atoms were piled up. The phosphorus dopant introduced the compressive stress in the films. The thin oxidized layer formed at the interface was an important factor governing the stress gradient in the multi-stacked film. This interface effect could be minimized using symmetrical stacking of polysilicon films and resulted in a low stress gradient of -0.15 MPa mu m(-1) for a 5.3 mu m thick polysilicon layer. In single crystalline silicon, the phosphorus dopant induced the tensile stress. The lattice dilation coefficient beta of 4.5 x 10(-24) cm(3) for phosphorus was measured using a high-resolution x-ray rocking curve. A stress model was introduced on the basis of the lattice dilation theory to calculate the stress and stress gradient induced by the dopant.