VLSI implementations of threshold logic-a comprehensive survey
VLSI implementations of threshold logic-a comprehensive survey
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DOI：
10.1109/tnn.2003.816365
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发表时间：
2003-09
影响因子：
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通讯作者：
Valeriu Beiu;J. Quintana;M. Avedillo
中科院分区：
文献类型：
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作者：
Valeriu Beiu;J. Quintana;M. Avedillo
本文是对阈值逻辑门的硅实现进行的深入综述，涵盖了几十年的内容。在本文中，我们将提及早期的MOS阈值逻辑解决方案，并详细介绍众多超大规模集成电路（VLSI）的实现方式，包括电容式（开关电容和浮栅及其变体）、电导/电流式（伪nMOS和输出线接反相器，包括由此衍生出的大量解决方案）以及许多差分解决方案。最后，我们将简要提及其他实现方式，例如基于负阻器件和单电子技术的实现方式。
This paper is an in-depth review on silicon implementations of threshold logic gates that covers several decades. In this paper, we will mention early MOS threshold logic solutions and detail numerous very-large-scale integration (VLSI) implementations including capacitive (switched capacitor and floating gate with their variations), conductance/current (pseudo-nMOS and output-wired-inverters, including a plethora of solutions evolved from them), as well as many differential solutions. At the end, we will briefly mention other implementations, e.g., based on negative resistance devices and on single electron technologies.