Assembly, structure, and performance of an ultra‐thin film organic field‐effect transistor (OFET) based on substituted oligothiophenes
Assembly, structure, and performance of an ultra‐thin film organic field‐effect transistor (OFET) based on substituted oligothiophenes
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基于取代低聚噻吩的超薄膜有机场效应晶体管(OFET)的组装、结构和性能
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发表时间:
2008
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通讯作者:
S. Scheinert
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作者:
K. Haubner;E. Jaehne;H. Adler;D. Koehler;C. Loppacher;L. Eng;J. Grenzer;A. Herasimovich;S. Scheinert
We report on the improved assembly and characterization of a small molecule organic field‐effect transistor (OFET). Novel α,ω‐dicyano substituted β,β′‐dibutylquaterthiophene molecules (DCNDBQT) were synthesized and characterized by UV–Vis spectroscopy, differential scanning calorimetry, thermal gravimetric analysis and cyclic voltammetry. The ultra‐thin organic film formation on TiO2 templates was effectively promoted through the specifically designed bifunctional self assembly molecules (SAM) 5‐cyano‐2‐(butyl‐4‐phosphonic acid)‐3‐butylthiophene (CNBTPA). Excellent structural properties were found for up to 9 DCNDBQT molecule thick films prepared through UHV vacuum sublimation as investigated with UHV non‐contact atomic force microscopy (nc‐AFM) and X‐ray diffraction. Both X‐ray and nc‐AFM data indicate that the DCNDBQT molecules form a well‐ordered terraced structure exhibiting step heights of 1.5 nm to 2.0 nm layers. Hence, the DCNDBQTmolecules are linked to the functional SAM interface layer by H‐bond interactions (see structure model) standing quasi perpendicular to the TiO2 template, and thus providing optimal orbital overlap neigh‐bouring thiophene rings.