Microstructure Control and Dielectric/Piezoelectric Properties of Alkoxy-Derived Ba(Ti,Zr)O3 Thin Films
Microstructure Control and Dielectric/Piezoelectric Properties of Alkoxy-Derived Ba(Ti,Zr)O3 Thin Films
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DOI：
10.1143/jjap.44.6885
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发表时间：
2005-09
影响因子：
1.5
通讯作者：
Kiyotaka Tanaka;Kazuyuki Suzuki;K. Nishizawa;T. Miki;K. Kato
中科院分区：
文献类型：
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作者：
Kiyotaka Tanaka;Kazuyuki Suzuki;K. Nishizawa;T. Miki;K. Kato
采用复合醇盐溶液化学溶液沉积法（CSD）在Pt（111）/Ti/SiO2/Si（100）衬底上制备了无铅铁电Ba（Ti 1-xZrO 2）O3（BTZ，x=0.00-0.50）薄膜。随着Zr含量x的增加，BTZ薄膜的结晶度由典型的无规取向转变为（111）择优取向。从介电常数εr和压电常数d33的成分依赖性来看，由纳米晶体组成的BTZ薄膜在室温下的箍缩区域出现在x=0.20附近。对于使用部分水解的醇盐溶液制备的BTZ薄膜（x=0.20），晶粒和微晶尺寸增加，εr和d33分别提高到253和8.9 pm/V。
Lead-free ferroelectric Ba(Ti1-xZrx)O3 (BTZ, x=0.00–0.50) thin films were fabricated on Pt(111)/Ti/SiO2/Si(100) substrates by the chemical solution deposition (CSD) process using complex alkoxide solutions. When the Zr content x was increased, the crystallinity of BTZ thin films was changed from the typical random orientation to the (111) preferred orientation. From the composition dependence of the dielectric constant εr and piezoelectric constant d33, the pinching region at room temperature of BTZ thin films consisting of nano-crystals appeared around x=0.20. For the BTZ thin film (x=0.20) fabricated using an alkoxide solution with partial hydrolysis, the grain and crystallite size were increased, and the εr and d33 were improved to 253 and 8.9 pm/V, respectively.