Capacitance evaluation of compact silicon triple quantum dots by simultaneous gate voltage sweeping
Capacitance evaluation of compact silicon triple quantum dots by simultaneous gate voltage sweeping
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DOI：
10.1063/1.4972197
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发表时间：
2016-12
影响因子：
3.2
通讯作者：
T. Uchida;M. Jo;A. Tsurumaki‐Fukuchi;M. Arita;A. Fujiwara;Yasuo Takahashi
中科院分区：
文献类型：
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作者：
T. Uchida;M. Jo;A. Tsurumaki‐Fukuchi;M. Arita;A. Fujiwara;Yasuo Takahashi
我们提出了一种简单的方法来评估三重量子点（TQD）串联耦合的紧凑型器件结构。紧凑的耦合量子点，每个都有一个附加的控制栅极，提供了有前途的应用，量子计算和单电子转移设备。然而，实际应用中所需的器件减小在控制栅极与其相邻点之间产生电容性串扰，使得难以确定每个点中的电荷过渡边界。为了正确地评估TQD的电子转移特性，提出了一种方法，即三个栅极电压同时扫描。利用蒙特卡罗模拟研究了紧凑型TQD的电荷稳定性图，证实了该方法的有效性。在本研究中，我们利用图案相关氧化法与附加氧化法来制作出结构紧凑的矽量子点。然后将该方法应用于从设备获得的稳定性图。九个测量T…
We propose a simple method to evaluate the triple quantum dots (TQDs) coupled in series with the compact device structure. Compact coupled quantum dots, each with an attached control gate, offer promising applications as quantum computing and single-electron transfer devices. However, device reduction required in practical applications creates a capacitive cross-talk between a control gate and its neighboring dots making it difficult to determine the charge transition boundaries in each dot. To properly evaluate the electron-transfer characteristics of TQDs, a method is proposed whereby the three gate voltages are simultaneously swept. We studied the charge stability diagram of the compact TQDs using Monte Carlo simulations, and confirmed the effectiveness of the method. Compact Si-TQDs were actually fabricated by the use of pattern-dependent oxidation and additional oxidation method for this study. The method was then applied to the stability diagrams obtained from the devices. The nine measurements of t...