Low-Voltage Organic Nonvolatile Thin-Film Transistor Memory Based on a P(MMA-GMA)–Al–O Complex Layer
Low-Voltage Organic Nonvolatile Thin-Film Transistor Memory Based on a P(MMA-GMA)–Al–O Complex Layer
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DOI：
10.1109/led.2010.2103297
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发表时间：
2011-02
影响因子：
4.9
通讯作者：
Wei Wang;Dongge Ma
中科院分区：
文献类型：
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作者：
Wei Wang;Dongge Ma
有机非挥发性薄膜晶体管存储器是在有源层和栅介质层之间嵌入一层复合层，通过在聚合物(甲基丙烯酸甲酯/甲基丙烯酸缩水甘油酯)上在烤箱中热处理一层薄的铝层(2.5 nm)来实现的。存储窗口和存储比对VGS扫描速率有显著的依赖关系，在-0.2V/S速率下可获得的最大值分别为13.3V和2010。在±15V的低编程/擦除电压下，晶体管表现出良好的存储循环特性和长数据保持特性。最后，讨论了目前晶体管存储器可能的工作机制。
An organic nonvolatile thin-film transistor memory is demonstrated by an inset complex layer between the active layer and the gate dielectric layer, which is realized by heat treating a thin Al layer (2.5 nm) on polymer poly(methyl methacrylate co glycidyl methacrylate) in an oven. The memory window and the memory ratio have a prominent dependence on the VGS sweeping rate, with the largest values of 13.3 V and 2010 which can be obtained at the rate of -0.2 V/S. At a low programming/erasing voltage of ±15 V, the transistors exhibit excellent memory circle characteristics and long data retention property. At last, the possible operation mechanisms of present transistor memories are discussed.