A Scalable 32-to-56Gb/s 0.56-to-1.28pJ/b Voltage-Mode VCSEL-Based Optical Transmitter in 28nm CMOS
A Scalable 32-to-56Gb/s 0.56-to-1.28pJ/b Voltage-Mode VCSEL-Based Optical Transmitter in 28nm CMOS
复制标题
采用 28nm CMOS 封装、基于电压模式 VCSEL 的可扩展 32 至 56Gb/s 0.56 至 1.28pJ/b 光发射机
DOI：
10.1109/cicc51472.2021.9431548
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发表时间：
2021
期刊：
影响因子：
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通讯作者：
J. Jaussi
中科院分区：
文献类型：
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作者：
Rajesh Inti;M. Mansuri;J. Kennedy;Junyi Qiu;Chun;J. Sharma;Hao Li;B. Casper;J. Jaussi
随着数据速率的不断提高，由于信号的丢失和失真，电互连的覆盖范围变得越来越短。基于垂直腔面发射激光器(VCSEL)的光互连为数据中心的数十米数据传输提供了一种经济高效的解决方案。但是，在服务器平台中集成光纤收发器需要提高带宽密度和能效。可缓解VCSEL非线性和带宽限制的高数据速率、紧凑面积和高能效发射器(TX)电路是实现这种集成的关键因素。本文介绍了一种用28 nm体硅工艺实现的光传输器件，它可以驱动一个850 nm的垂直腔面发射激光器，最高可达56 Gb/S。
As data rates continue to increase, the reach of electrical interconnects is becoming shorter due to loss and distortion of the signal. Optical interconnects based on vertical-cavity surface-emitting lasers (VCSELs) provide a cost-effective solution to transfer data over tens of meters in data centers. However, integrating optical transceivers within a server platform requires improved bandwidth density and energy efficiency. High data-rate, compact area, and energy-efficient transmitter (TX) circuits that mitigate VCSEL nonlinearity and bandwidth limitations are key enablers of this integration. This paper presents an optical TX implemented in 28nm bulk CMOS which drives an 850nm VCSEL up to 56Gb/s.