Spin MOSFETs as a basis for spintronics
Spin MOSFETs as a basis for spintronics
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DOI：
10.1145/1149976.1149980
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发表时间：
2006-05
期刊：
影响因子：
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通讯作者：
S. Sugahara;Masaaki Tanaka
中科院分区：
文献类型：
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作者：
S. Sugahara;Masaaki Tanaka
本文回顾了最近提出的一种新型自旋晶体管，称为自旋金属氧化物半导体场效应晶体管（自旋 MOSFET），及其集成电路应用。介绍了基本的器件结构、工作原理和理论上预测的器件性能。自旋 MOSFET 可能表现出显着的磁输运效应，例如大磁电流，并且还满足集成电路应用的重要要求，例如高跨导、低功率延迟积和低关断电流。由于自旋 MOSFET 可以执行信号处理和逻辑运算，并且可以使用电荷传输和自旋自由度存储数字数据，因此它们有望成为自旋电子集成电路中存储单元和逻辑门的构建块。还提出了用于非易失性存储器和采用自旋 MOSFET 的可重构逻辑的新型自旋电子集成电路架构。
This article reviews a recently proposed new class of spin transistors referred to as spin metal-oxide-semiconductor field-effect transistors (spin MOSFETs), and their integrated circuit applications. The fundamental device structures, operating principle, and theoretically predicted device performance are presented. Spin MOSFETs potentially exhibit significant magnetotransport effects, such as large magneto-current, and also satisfy important requirements for integrated circuit applications such as high transconductance, low power-delay product, and low off-current. Since spin MOSFETs can perform signal processing and logic operations and can store digital data using both charge transport and spin degrees of freedom, they are expected to be building blocks for memory cells and logic gates in spin-electronic integrated circuits. Novel spin-electronic integrated circuit architectures for nonvolatile memory and reconfigurable logic employing spin MOSFETs are also presented.