Proper-Orthogonal-Decomposition Based Thermal Modeling of Semiconductor Structures
Proper-Orthogonal-Decomposition Based Thermal Modeling of Semiconductor Structures
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DOI：
10.1109/ted.2012.2211878
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发表时间：
2012-09
影响因子：
3.1
通讯作者：
R. Venters;B. Helenbrook;Kun Zhang;M. Cheng
中科院分区：
文献类型：
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作者：
R. Venters;B. Helenbrook;Kun Zhang;M. Cheng
利用层次函数空间，而不是物理空间，建立了半导体结构的热模型。热模型是使用适当的正交分解（POD）导出的，不需要任何关于物理几何、尺寸或热流路径的假设，而通常需要紧凑/集总热模型。该方法可以应用于复杂的几何形状，并以与集总热模型相当的计算成本提供详细的热信息。将POD热模型应用于二维绝缘体上硅（SOI）器件结构的稳态热模拟，并根据详细的数值模拟（DNS）数据在不同功率水平下进行了验证。结果表明，仅使用四种POD模式的POD热模型可以复制由DNS导出的温度解，包括热点和沿器件岛的温度梯度。此外，建立了SOI器件结构的非定常POD模型。与相应的非稳态DNS结果相比，包含10种模式的POD模型产生了几乎相同的解决方案。
A thermal model of a semiconductor structure is developed using a hierarchical function space, rather than physical space. The thermal model is derived using the proper orthogonal decomposition (POD) and does not require any assumptions about the physical geometry, dimensions, or heat flow paths, as is usually necessary for compact/lumped thermal models. The approach can be applied to complex geometries and provides detailed thermal information at a computational cost comparable to that of lumped thermal models. The POD thermal model is applied to steady thermal simulations of a 2-D silicon-on-insulator (SOI) device structure and validated at various power levels against detailed numerical simulation (DNS) data. It is shown that a POD thermal model using only four POD modes can duplicate the temperature solution derived from DNS, including the hot spot and temperature gradients along the device island. In addition, an unsteady POD model of the SOI device structure is constructed. A POD model incorporating ten modes yielded a virtually identical solution when compared to corresponding unsteady DNS results.