Progress Toward III-V Bismide Alloys for Near- and Midinfrared Laser Diodes
Progress Toward III-V Bismide Alloys for Near- and Midinfrared Laser Diodes
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DOI：
10.1109/jstqe.2017.2719403
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发表时间：
2017-11-01
影响因子：
4.9
通讯作者：
Sweeney, Stephen J.
中科院分区：
文献类型：
--
作者：
Marko, Igor P.;Sweeney, Stephen J.
含铋的III-V族合金为半导体激光器、光电子学、自旋电子学、光电二极管和热电学的实际应用开辟了一系列可能性。对于半导体激光器的发展来说，特别有希望的是生长GaAsBi激光器结构的可能性，使得对于在1.55 μ m的电信波长附近工作的器件，自旋-轨道分裂能量（Δ（SO））大于有源区中的带隙（E-g），从而抑制这种激光器中主要的效率限制损耗过程，即俄歇复合和价带间吸收。在含Bi> 10%的GaAsBi合金中存在Delta（SO）> E-g能带结构，在该成分下，GaAs衬底上的合金带隙接近1.55 μ m，使它们成为开发用于通信的高效非制冷GaAs基激光器的有吸引力的候选材料系统。在这里，我们讨论了这一目标的进展，并提出了一套全面的数据GaAsBi激光器的性能，包括光学增益和吸收特性和占主导地位的载流子复合过程中，这样的系统。最后，我们简要回顾了GaAs和InP平台上的GaAsBiN和InGaAsBi材料系统的近红外和中红外光子器件的潜力。
Bismuth-containing III-V alloys open-up a range of possibilities for practical applications in semiconductor lasers, photovoltaics, spintronics, photodiodes, and thermoelectrics. Of particular promise for the development of semiconductor lasers is the possibility to grow GaAsBi laser structures such that the spin-orbit splitting energy (Delta(SO)) is greater than the bandgap (E-g) in the active region for devices operating around the telecom wavelength of 1.55 mu m, thereby suppressing the dominant efficiency-limiting loss processes in such lasers, namely Auger recombination and intervalence band absorption. The Delta(SO) > E-g band structure is present in GaAsBi alloys containing > 10% Bi, at which composition the alloy bandgap is close to 1.55 mu m on a GaAs substrate making them an attractive candidate material system for the development of highly efficient, uncooled GaAs-based lasers for telecommunications. Here, we discuss progress toward this goal and present a comprehensive set of data on the properties of GaAsBi lasers including optical gain and absorption characteristics and the dominant carrier recombination processes in such systems. Finally, we briefly review the potential of GaAsBiN and InGaAsBi material systems for near-and midinfrared photonic devices on GaAs and InP platforms, respectively.