Self-organized nanostripe arrays on ZnO (10-10) surfaces formed during laser molecular-beam-epitaxy growth
Self-organized nanostripe arrays on ZnO (10-10) surfaces formed during laser molecular-beam-epitaxy growth
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DOI：
10.1063/1.2081133
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发表时间：
2005-09
影响因子：
4
通讯作者：
H. Matsui;H. Tabata
中科院分区：
文献类型：
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作者：
H. Matsui;H. Tabata
在激光分子束外延（laser-MBE）生长过程中，ZnO（10-10）表面自然形成了10 - 5cm-1量级的高密度纳米条纹阵列。纳米条带阵列的长度大于5μm，沿[0001]方向沿着有少量分支。透射电子显微镜观察表明，纳米条阵列的横截面呈三角形，两侧键合面由高折射率[（31-40）]和（4-1-30）]面组成。纳米条纹阵列的生长起源于台阶刻面机制和激光分子束外延的非热平衡生长。可以通过与烧蚀的活性物种的表面扩散长度相关的各种生长条件来控制台阶刻面。结果表明，ZnO（10-10）层的高度各向异性表面显著影响电子输运，平行于纳米带边缘的霍尔迁移率比垂直于边缘的霍尔迁移率大两个数量级以上。
Nanostripe arrays with high density in the orders of 10−5cm−1 were naturally formed on ZnO (10-10) surfaces during laser molecular-beam-epitaxy (laser-MBE) growth. The nanostripe arrays were elongated above 5μm with a few branches along the [0001] direction. Transmittance electron microscopy showed that the nanostripe arrays were triangular-shaped in the cross section and two side bonding facets were composed of high-index [(31-40) and (4-1-30)] planes. The growth origin of the nanostripe arrays was derived from a step-faceting mechanism and nonthermal equilibrium growth by laser-MBE. The step faceting could be controlled by various growth conditions relating to the surface diffusion length of the ablated active species. It was found that the highly anisotropic surfaces dramatically affected electron transport of the ZnO (10-10) layers with Hall mobility parallel to the nanostripe edges more than two orders of magnitude larger than that perpendicular to the edges.