Surface morphology of anisotropically etched single-crystal silicon
Surface morphology of anisotropically etched single-crystal silicon
复制标题
各向异性蚀刻单晶硅的表面形貌
DOI：
10.1088/0960-1317/10/4/306
复制
发表时间：
2000
影响因子：
2.3
通讯作者：
Kazuo Sato
中科院分区：
文献类型：
--
作者：
M. Shikida;K. Tokoro;D. Uchikawa;Kazuo Sato
我们研究了各向异性蚀刻单晶硅表面形貌的半球形样品。出现在试样表面的小面结构可分为三种模式类型。每种图案起源于三个主要平面中的一个。（100）平面起始区域具有光滑的表面并向（111）平面扩展。（110）平面起源地为三角形柱状结构。（111）飞机起源地为阶梯状结构。我们绘制了所有晶体取向的面结构图，并表明它与蚀刻速率的分布模式相对应。因此，出现在蚀刻表面上的面结构与各向异性蚀刻速率密切相关。
We investigated the surface morphology of an anisotropically etched single-crystal silicon surface using a hemispherical specimen. The facet structures that appeared on the specimen surface were classified into three pattern types. Each pattern originated from one of three principal planes. The (100) plane-originated area had a smooth surface and expanded towards a (111) plane. The (110) plane-originated area was covered with triangular column structures. The (111) plane-originated area was covered with step structures. We made a map of the facet-structure pattern for all crystallographic orientations and showed that it corresponds to the distribution pattern of the etching rates. The facet structures that appear on an etched surface are thus strongly related to the anisotropic etching rates.