Infrared wavelength and temperature dependence of optically induced terahertz radiation from InSb
Infrared wavelength and temperature dependence of optically induced terahertz radiation from InSb
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InSb 光感生太赫兹辐射的红外波长和温度依赖性
DOI：
10.1063/1.112542
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发表时间：
1994
影响因子：
4
通讯作者：
L. Schlie
中科院分区：
文献类型：
--
作者：
S. Howells;S. Herrera;L. Schlie
报道了用125 fs激光脉冲辐照未掺杂和掺Te InSb产生的太赫兹辐射的温度和红外波长（0.8，1.4和1.9 μm）依赖性的结果。未掺杂的InSb在80和260 K之间显示出太赫兹辐射的光谱内容的实质性变化，而Te掺杂的InSb的光谱几乎保持不变，这归因于其迁移率由杂质散射主导。此外，太赫兹辐射从未掺杂的InSb在80 K是依赖于照射波长，具有更高的频谱和更大的幅度产生在较长的波长。在260 K时没有观察到这种效应。
Results of the temperature and infrared wavelength (0.8, 1.4, and 1.9 μm) dependence of terahertz radiation generated from both undoped and Te‐doped InSb irradiated with ≊125 fs laser pulses are reported. Undoped InSb shows a substantial change in the spectral content of the terahertz radiation between 80 and 260 K, while the spectrum of Te‐doped InSb remains nearly unchanged, an effect attributed to its mobility being dominated by impurity scattering. Also, the terahertz radiation from undoped InSb at 80 K is dependent on the irradiating wavelength, with both a higher frequency spectrum and much larger amplitude generated at longer wavelengths. No such effect is observed at 260 K.