Stability of YAlO3 in hydrogen at high temperature
Stability of YAlO3 in hydrogen at high temperature
复制标题
YAlO3在氢气中高温稳定性
DOI：
10.1007/s12598-011-0306-5
复制
发表时间：
2011-11
期刊：
影响因子：
8.8
通讯作者：
Cao Jiangli
中科院分区：
文献类型：
--
作者：
Chen Na;Tang Tao;Shi Boying;Cao Shengli;Cao Jiangli
氧化物材料的氢诱导改性已开始引起人们对氢相关氧化物材料领域的极大兴趣。从科学和技术角度来看，氢相关氧化物材料的氢诱导改性科学需要更广泛和深入的研究。 Al2O3和Y2O3已在许多领域得到应用，例如：热障涂层、氚渗透障壁及耐火材料等。然而，这些结构材料有时会在恶劣的还原环境下使用，这对材料的机械性能和电性能提出了严格的要求。然而，YAlO3（即Y2O3和Al2O3的复合氧化物）在还原气氛中的性能几乎没有研究。因此，本研究对YAlO3单晶在氢气中高温下的稳定性进行了研究。结果表明，随着氢处理时间的增加，YAlO3的硬度和电阻率降低。通过X射线衍射图谱和红外吸收光谱的比较，分析了氢致改变YAlO3单晶电性能和硬度的机理。
Hydrogen-induced modifications of oxide materials have started to trigger much interest in the field of hydrogen-related oxide materials. From both scientific and technological viewpoints, the sciences of hydrogen-induced modifications of hydrogen-related oxide materials need to be studied more extensively and intensively. Al2O3 and Y2O3 have been applied in many areas, e.g. thermal barrier coatings, tritium permeation barriers and refractory materials and so on. However, these structural materials are sometimes used in harsh reducing environments, which proposes strict requirements in the mechanical and electrical properties of the materials. However, the performance of YAlO3 in reducing atmospheres, i.e. the complex oxide of Y2O3 and Al2O3, has hardly been studied. Therefore, the stability of YAlO3 single crystals in hydrogen at high temperature was investigated in the present study. The results show that with increasing hydrogen treatment time, the hardness and electrical resistivity of YAlO3 decrease. The mechanism for hydrogen-induced modifications of the electrical properties and hardness of YAlO3 single crystals were analyzed through comparisons of X-ray diffraction patterns and infrared absorption spectra.
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DOI：
10.1016/0168-9002(94)90500-2
发表时间：
1994-07-01
影响因子：
1.4
作者：
MOSZYNSKI, M;LUDZIEJEWSKI, T;NORLIN, LO
通讯作者：
NORLIN, LO
DOI：
10.1557/proc-813-h3.2
发表时间：
2002-11
期刊：
MRS Proceedings
影响因子：
--
作者：
M. McCluskey;S. Jokela;K. Zhuravlev;P. J. Simpson;Kelvin G. Lynn
通讯作者：
M. McCluskey;S. Jokela;K. Zhuravlev;P. J. Simpson;Kelvin G. Lynn
影响因子：
8.6
作者：
Van de Walle, CG
通讯作者：
Van de Walle, CG
影响因子：
1.8
作者：
G. Neuroth;F. Wallrafen
通讯作者：
G. Neuroth;F. Wallrafen
影响因子：
6.2
作者：
W. Chen;W. Xiang;Minghao Guo;W. You;Xingzhong Zhao;H. Chan
通讯作者：
W. Chen;W. Xiang;Minghao Guo;W. You;Xingzhong Zhao;H. Chan