Sensitivity enhancement of amorphous InGaZnO thin film transistor based extended gate field-effect transistors with dual-gate operation
Sensitivity enhancement of amorphous InGaZnO thin film transistor based extended gate field-effect transistors with dual-gate operation
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DOI：
10.1016/j.snb.2013.02.056
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发表时间：
2013-05-01
影响因子：
8.4
通讯作者：
Cho, Won-Ju
中科院分区：
文献类型：
--
作者：
Jang, Hyun-June;Gu, Ja-Gyeong;Cho, Won-Ju
采用双栅极工作模式，实现了非晶铟镓氧化锌（a- igzo）基TiO2扩展栅场效应晶体管（egfet）的高pH灵敏度，达到129.1 mV/pH，超出了Nernst响应极限。DG操作的前、下栅极介电介质之间的电容耦合大大提高了灵敏度和化学稳定性。开发的高性能pH传感器基于a- igzo薄膜晶体管的杰出电气特性，其开/关电流比为3.7 x 10(7)，亚阈值摆幅为86 mV/dec，场效应迁移率为17.62 cm(2)/V s。(c) 2013 Elsevier B.V.。
Amorphous indium-gallium zinc oxide (a-IGZO) based TiO2 extended gate field-effect transistors (EGFETs) with a high pH sensitivity of 129.1 mV/pH beyond the Nernst response limit were realized by the dual gate operation mode. The capacitive coupling between the front and bottom gate dielectric for the DG operation greatly improved its sensitivity as well as its chemical stability. The developed high performance pH sensor was rooted in outstanding electrical characteristics of an a-IGZO thin film transistor with an on/off current ratio of 3.7 x 10(7), a subthreshold swing of 86 mV/dec, and a field-effect mobility of 17.62 cm(2)/V s. (c) 2013 Elsevier B.V. All rights reserved.