Reflection high-energy-electron-diffraction studies of mass transport and low-temperature growth of Ag/Si(111).
Reflection high-energy-electron-diffraction studies of mass transport and low-temperature growth of Ag/Si(111).
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Ag/Si(111) 质量传输和低温生长的反射高能电子衍射研究。
DOI：
10.1103/physrevb.47.12705
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发表时间：
1993
期刊：
影响因子：
--
通讯作者：
Tringides Mc
中科院分区：
文献类型：
--
作者：
Roos Kr;Tringides Mc
本文用反射高能电子衍射定量斑点分析研究了Ag/Si（111）系统的生长模式和质量输运机制。在150 K的生长模式是准层的层，表明显着的吸附原子的流动性。几个沉积速率的镜面光束强度随时间的缩放表明没有热激活扩散。通过比较Ag/Si（111）-（[radical]3 [times] [radical]3）[ital R]30[degree]系统在不同沉积速率下的初始生长速率和最终半高宽，进一步证实了非热扩散的存在。
We have studied the growth modes and mass-transport mechanism of the Ag/Si(111) system by using reflection high-energy-electron-diffraction quantitative spot analysis. The growth mode at 150 K is quasi-layer-by-layer, indicating significant adatom mobility. The scaling of the specular beam intensity with time for several deposition rates suggests the absence of thermally activated diffusion. The presence of nonthermal diffusion is further confirmed from the comparison of the initial growth rates and the final full width at half maximum attained at different deposition rates for the Ag/Si(111)-([radical]3 [times] [radical]3 )[ital R]30[degree] system.