Measurements of Ultra-Shallow Junction (USJ) Sheet Resistance with a Non-Penetrating Four Point Probe
Measurements of Ultra-Shallow Junction (USJ) Sheet Resistance with a Non-Penetrating Four Point Probe
复制标题
使用非穿透性四点探针测量超浅结 (USJ) 薄层电阻
DOI：
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发表时间：
2004
期刊：
影响因子：
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通讯作者：
J. Borland
中科院分区：
文献类型：
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作者：
R. Hillard;R. Mazur;W. Alexander;C. Ye;M. Benjamin;J. Borland
介绍了一种精确测量USJ源漏结构四点探针方阻(Rs)的方法。新方法利用弹性材料探头(EM-探头)在硅表面形成非穿透接触。探头的设计是运动学的，力被控制以确保探头材料的弹性变形。探头材料的选择使得大的直接隧穿电流可以流经自然氧化物，从而形成低阻抗接触。测量了SIMS结深度为15 nm的USJ注入P+/N结构的方阻。用新的EM-Probe 4PP方法得到的方电阻值与预期一致。在本文中，该方法将在各种植入USJ结构上进行演示。
An accurate method to measure the four point probe (4PP) sheet resistance (Rs) of USJ Source-Drain structures is described. The new method utilizes Elastic Material probes (EM- probe) to form non-penetrating contacts to the silicon surface. The probe design is kinematic and the force is controlled to ensure elastic deformation of the probe material. The probe material is selected so that large direct tunneling currents can flow through the native oxide thereby forming a low impedance contact. Sheet resistance measurements on USJ implanted P+/N structures with SIMS junction depths as shallow as 15 nm have been measured. The sheet resistance values obtained with the new EM-probe 4PP method were found to be consistent with expectations. In this paper, the method will be demonstrated on a variety of implanted USJ structures.